Silanone „SiBO... on Si„100...: intermediate for initial silicon oxidation
نویسندگان
چکیده
Infrared-absorption measurements and first-principles quantum chemical calculations reveal that the initial oxidation of clean Si(100)-(231) by O2 involves the formation of a metastable silanone intermediate, (O)SivO, containing two oxygen atoms presumably from the same O2 molecule. Oxygen insertion into the surface silicon Si-Si backbonds is either thermally activated ~;1-eV barrier! or induced by atomic hydrogen exposure with formation of novel dihydride intermediates.
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